CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference49 articles.
1. A 3 kV Schottky barrier diode in 4H-SiC
2. Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes
3. High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
4. SiC power devices for high voltage applications
5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
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