Author:
Simoen E.,Lee J. W.,Veloso A.,Paraschiv V.,Horiguchi N.,Claeys C.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference37 articles.
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2. Reliability Improvement of 28-nm High-$k$/Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing
3. Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- $k$ pMOSFETs
4. Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects
5. Spectral dependence of noise on gate bias in n-MOSFETS
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