SiO2 / Si Interface Structures and Reliability Characteristics-Reference-Cited by-同舟云学术

SiO2 / Si Interface Structures and Reliability Characteristics

Published:1995-01-01 Issue:1 Volume:142 Page:273-282
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Hasegawa Eiji¹,Ishitani Akihiko¹,Akimoto Koichi²,Tsukiji Masaru¹,Ohtac Noriko³

Affiliation:

1. ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan

2. Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan

3. NEC Scientific Information System Development, Ltd., 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2043901/pdf

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