Interfacial reaction-dominated full oxidation of 5 nm diameter silicon nanowires
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764004
Reference31 articles.
1. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications
2. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
3. Functional Nanowires
4. Small-Diameter Silicon Nanowire Surfaces
5. High Performance Silicon Nanowire Field Effect Transistors
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1. A diffusion, oxidation reaction and large viscoelastic deformation coupled model with applications to SiC fiber oxidation;International Journal of Plasticity;2019-07
2. Stress-Dependent Local Oxidation of Silicon;SIAM Journal on Applied Mathematics;2017-01
3. Interface modification and trap-type transformation in Al-doped CdO/Si-nanowire arrays/p-type Si devices by nanowire surface passivation;Current Applied Physics;2015-03
4. Atomistic modeling of bending properties of oxidized silicon nanowires;Journal of Applied Physics;2014-03-14
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