Achieving Sub-0.1 eV Hole Schottky Barrier Height for NiSiGe on SiGe by Aluminum Segregation-Reference-Cited by-同舟云学术

Achieving Sub-0.1 eV Hole Schottky Barrier Height for NiSiGe on SiGe by Aluminum Segregation

Published:2009 Issue:4 Volume:156 Page:H233
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Sinha Mantavya,Lee Rinus T. P.,Lohani Anup,Mhaisalkar Subodh,Chor Eng Fong,Yeo Yee-Chia

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. In Search of “Forever,” Continued Transistor Scaling One New Material at a Time

2. P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

3. SIA, International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (2007).

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