(Invited) Wafer Bonding Technology in Nitride Semiconductors for Applications in Energy and Communications

Abstract

Wafer bonding is an enabling technology for the fabrication of advanced electronic devices based on the integration of high-quality heterogeneous materials. This paper summarizes our work on wafer-level bonding of nitride semiconductors and its application to electronic devices. Our bonding technology uses a thin silicon dioxide (SiO2) or Benzocyclobutene (BCB) interlayer to enhance the bonding, and it has been applied to the fabrication of three different kinds of devices: hybrid chips where Si (100) MOSFETs are integrated with GaN transistors in close proximity; N-face GaN transistors on Ga-face grown material for high frequency applications; and high power GaN power switches with record breakdown characteristics.