Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories

Author:

Boubekeur H.,Höpfner J.,Mikolajick T.,Dehm C.,Frey L.,Ryssel H.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. In situ growth of -axis-oriented thin films on Si(001);Solid State Communications;2007-02

2. Platinum contamination issues in ferroelectric memories;Journal of Applied Physics;2002-09-15

3. Effect of barium contamination on gate oxide integrity in high-k dram;Journal of Non-Crystalline Solids;2002-05

4. Atomic Spectrometry Update. X-ray fluorescence spectrometry;Journal of Analytical Atomic Spectrometry;2001

5. Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon;High Dielectric Constant Materials

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