1. R.M. Wallace and G.D. Wilk, Semicond. Int. 24, 227 (2001)
2. G.D. Wilk, R.M. Wallace, and J.M. Anthony, J. Appl. Phys. 89, 5243 (2001)
3. R.M. Wallace and G.D. Wilk, Semicond. Int. 24, 153 (2001)
4. H.R. Huff, A. Agarwal, Y. Kim, L. Perrymore, D. Riley, J. Barnett, C. Sparks, M. Freiler, G. Gebara, B. Bowers, P.J. Chen, P. Lysaght, B. Nguyen, J.E. Lim, S. Lim, G. Bersuker, P. Zeitzoff, G.A. Brown, C. Young, B. Foran, F. Shaapur, A. Hou, C. Lim, H. Alshareef, S. Borthakur, D.J. Derro, R. Bergmann, L.A. Larson, M.I. Gardner, J. Gutt, R.W. Murto, K. Torres, and M.D. Jackson, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001 (IEEE Cat. No.01EX537), Japan Soc. Appl. Phys., 2 (2001)
5. S.A. Campbell, B. He, R. Smith, T. Ma, N. Hoilien, C. Taylor, and W.L. Gladfelter, in Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, ed. by A.C. Jones, J. Veteran, D. Mullin, R. Cooper, and S. Kaushal, Mater. Res. Soc., Warrendale (2000), p. 23