Author:
Veloso Anabela,Altamirano-Sánchez Efraín,Brus Stephan,Chan B. T.,Cupak Miroslav,Dehan Morin,Delvaux Christie,Devriendt Katia,Eneman Geert,Ercken Monique,Huynh-Bao Trong,Ivanov Tsvetan,Matagne Philippe,Merckling Clement,Paraschiv Vasile,Ramesh Siva,Rosseel Erik,Rynders Luc,Sibaja-Hernandez Arturo,Suhard Samuel,Tao Zheng,Vecchio Emma,Waldron Niamh,Yakimets Dmitry,De Meyer Kristin,Mocuta Dan,Collaert Nadine,Thean Aaron
Abstract
This work reports on vertical nanowire FET devices (VNWFETs) with a gate-all-around (GAA) configuration, which offer new, promising opportunities to enable further CMOS scaling and increased layout efficiency. Compared to triple-gate finFETs or lateral GAA-NWFETs, these devices are shown to have the potential for exhibiting lower parasitic RC and reduced power consumption at 5nm node design rules. They can also allow up to 30% denser SRAM bitcells with improved read and write stability, smaller minimum operating voltages (Vmin), and lower standby leakage values. A comprehensive overview of some key integration aspects for VNWFET fabrication will also be addressed here, covering: VNW arrays, gate/top electrodes, and bottom/top isolation layers formation. In addition, we also present alternative solutions to obtain improved process control and to overcome etch-layout dependences which are especially critical within the context of vertical device integration using a channel-first approach.
Publisher
The Electrochemical Society
Cited by
39 articles.
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