Annealing Induced Interfacial Evolution of Titanium/Gold Metallization on Unintentionally Dopedβ-Ga2O3
Author:
Funder
DOD | Office of Naval Research
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Semiconducting and other major properties of gallium arsenide
2. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
3. Quay R. , Gallium Nitride Electronics, p. 470, Springer-Verlag Berlin Heidelberg, (2008).
4. Gallium nitride devices for power electronic applications
5. Frontier of transparent oxide semiconductors
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