Author:
Afanas'ev Valeri V.,Stesmans Andre
Abstract
Internal photoemission and photoconductivity experiments are used to characterize interfaces of high-mobility semiconductors GaAs, InxGa1-xAs, Ge, and Si1-xGex with metal oxide insulators. Compared to silicon, formation of a narrow-gap interlayer and composition-sensitive semiconductor band structure are revealed as the most influential factors affecting the interface barriers.
Publisher
The Electrochemical Society
Cited by
4 articles.
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