Author:
Nam Ju Hyung,Fuse Takashi,Nishi Yoshio,Saraswat Krishna C.
Abstract
A technique to achieve germanium on insulator (GOI) structure on Si platform using hetero-epitaxial lateral overgrowth is presented. On (100) Si wafer, SiO2 is thermally grown, and patterned to locally reveal Si surface on which Ge is grown via selective epitaxy. After filling the growth window, Ge starts growing laterally, and adjacent Ge crystals coalesce with each other on SiO2. After the coalescence, <100> directional growth is made dominant, to fill the valley and planarize the surface. Thus, single crystalline Ge film sitting on SiO2 can be made for GOI applications.
Publisher
The Electrochemical Society
Cited by
5 articles.
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