Author:
Si Weihua,Yin Ming,Qin Jian,Liu Zewen
Abstract
Silicon sieve with nano-scale holes array used as atomic lithography aperture had been realized with a method combining of deep dry etching and silicon anisotropic wet etching. The influence of etchant concentration and temperature on the etching rate is carefully studied. Unusual bath temperature at 40° was used in the wet etching process. With a sputtered layer of Cr (300nm) as the wet etching mask and a layer of Al (700nm) as the deep dry etching mask nano holes array with 108nm feature size are obtained on single crystalline silicon.
Publisher
The Electrochemical Society
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Coulter Principle and Its Application;Journal of Engineering Studies;2016-12-01
2. Fabrication of Silicon Nanopore Arrays with Three-Step Wet Etching;ECS Transactions;2013-03-08
3. Fabrication of silicon nanopore arrays using a combination of dry and wet etching;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-11