Plasma Charging Damage and Water‐Related Hot‐Carrier Reliability in the Deposition of Plasma‐Enhanced Tetraethylorthosilicate Oxide-Reference-Cited by-同舟云学术

Plasma Charging Damage and Water‐Related Hot‐Carrier Reliability in the Deposition of Plasma‐Enhanced Tetraethylorthosilicate Oxide

Published:1997-07-01 Issue:7 Volume:144 Page:2525-2530
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lin Y. M.¹,Jang S. M.²,Yu C. H.²,Lei T. F.¹,Chen J. Y.²

Affiliation:

1. Department of Electronics Engineering and Institute of Electronics, National Chiao‐Tung University, Hsin‐Chu, Taiwan

2. Taiwan Semiconductor Manufacturing Company, Research and Development, Hsin‐Chu, Taiwan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837849/pdf

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1. Mechanism of Plasma Charging Damage III;Plasma Charging Damage;2001

2. Particle generation and thin film surface morphology in the tetraethylorthosilicate/oxygen plasma enhanced chemical vapor deposition process;Journal of Applied Physics;2000-09

3. Oxidation of silicon nitride films in an oxygen plasma;Journal of Applied Physics;1999-03-15

4. Structural analysis of silicon dioxide and silicon oxynitride films produced using an oxygen plasma;IEEE Transactions on Plasma Science;1998

5. Damage-free plasma treatment before SACVD deposition;2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479)