Interactions between Developable Bottom Anti Reflective Materials and Surface Preparations

Abstract

Latest generations of integrated circuits require some tight control of critical dimensions during photolithography's operations. Hence the introduction of dBARCs (developable Bottom Anti Reflective Coating) at many litho steps. This greatly improves the optical performances [1], especially when the photo lithography is performed on wafers with irregular topology. Nonetheless a high care is required on the areas where the resist is developed. Indeed, organic residues are often left on these surfaces with serious consequences. This article brings some characterizations' data and solutions.