Investigation of the TiN/photoresist interface degradation during a wet etch-Reference-Cited by-同舟云学术

Investigation of the TiN/photoresist interface degradation during a wet etch

Published:2015-03 Issue: Volume:135 Page:7-12
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Foucaud Mathieu,Guiheux Denis,Pinceau David,Garnier Philippe,Pargon Erwine,Tiron Raluca

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. CMOS gate oxide defects induced by pre-gate plasma process

2. Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch

3. Interactions between Developable Bottom Anti Reflective Materials and Surface Preparations

4. Blister Formation at Photoresist-Substrate Interface

5. Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch

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3. Non-destructive spatial characterization of buried interfaces in multilayer stacks via two color picosecond acoustics;Applied Physics Letters;2017-12-11

4. Grafting of Aminoethylphosphonic Acid Monolayers on Titanium Nitride: The Effect of Surface Pretreatments through Electrochemical-Assisted Oxidation;Advanced Materials Interfaces;2016-12-12

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