Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes-Reference-Cited by-同舟云学术

Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes

Published:1997-04-01 Issue:4 Volume:144 Page:1417-1422
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lee J. W.¹²³⁴,Abernathy C. R.¹²³⁴,Pearton S. J.¹²³⁴,Ren F.¹²³⁴,Hobson W. S.¹²³⁴,Shul R. J.¹²³⁴,Constantine C.¹²³⁴,Barratt C.¹²³⁴

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

3. Sandia National Laboratories, Albuquerque, New Mexico 87185

4. Plasma Therm IP, St. Petersburg, Florida 33716

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837604/pdf

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