Author:
Smirnova Tamara P.,Kuznetsov Fedor A.,Yakovkina Lubov,Kaichev Vasiliy,Kosyakov Victor,Lebedev Mikhail,Kichai Vadim
Abstract
Thermodynamic consideration of Hf-HfO2-SiO2-Si system, cross-sectional HR-TEM, XPS, IR-spectroscopy and Null ellipsometry technique were used to determine the chemical composition and structure of the HfO2 thin films deposited on Si. The interface layer consists of the hafnium silicate with smoothly varying chemical composition along the film thickness. Formation of the IL occurs as during the HfO2 film deposition so at annealing of the HfO2/SiO2/Si structure. Kinetics of the hafnium silicate formation was studied by IR-spectroscopy.
Publisher
The Electrochemical Society
Cited by
6 articles.
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