Author:
Oomine Hiroshi,Zadeh Dariush Hassan,Kakushima Kuniyuki,Kataoka Yoshinori,Nishiyama Akira,Sugii Nobuyuki,Wakabayashi Hitoshi,Tsutsui Kazuo,Natori Kenji,Iwai Hiroshi
Abstract
The effect of La2O3 atomic-layer-deposition (ALD) conditions by La(iPrCp)3 and H2O, on the electrical properties of metal/La2O3/In0.53Ga0.47As MOS capacitor has been investigated. We found that the low growth temperature can effectively improve the La2O3/In0.53Ga0.47As interface properties and gate leakage current. It is shown that by controlling the growth temperature of ALD, near ideal capacitance-voltage (C-V) characteristics with low interface state density (Dit) values (~8 x 1011 eV-1cm-2) can be obtained.
Publisher
The Electrochemical Society
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献