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Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

  • Published:2011 Issue:7 Volume:14 Page:J41
  • ISSN:1099-0062
  • Container-title:Electrochemical and Solid-State Letters
  • language:en
  • Short-container-title:Electrochem. Solid-State Lett.

Author:

Lee Jun-Young,Kim Jeong-Eun,Hwang Jin-Ha,Ahn Jae-Pyoung,Lee Byung Kook,Kim Seok-Hwan,Chung Taek-Mo,Lee Sun Sook,Kim Chang Gyoun,An Ki-Seok

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Layer Deposition of Transparent p-Type Semiconducting Nickel Oxide Using Ni(tBu2DAD)2 and Ozone;ACS Applied Materials & Interfaces;2019-07-25

2. Nanoparticles-Based Flash-Like Nonvolatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer;Charge-Trapping Non-Volatile Memories;2017

3. Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOxfilm;AIP Advances;2016-05

4. Nonvolatile memory devices based on self-assembled nanocrystals;Physica E: Low-dimensional Systems and Nanostructures;2013-06

5. Nickel nanoparticle size and density effects on non-volatile memory performance;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
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