InGaN Light-Emitting Diodes with Multiple-Porous GaN Structures Fabricated through a Photoelectrochemical Etching Process-Reference-Cited by-同舟云学术

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InGaN Light-Emitting Diodes with Multiple-Porous GaN Structures Fabricated through a Photoelectrochemical Etching Process

Published:2014 Issue:10 Volume:3 Page:R185-R188
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Huang Kun-Pin,Wu Kaun-Chun,Fan Feng-Hsu,Tseng Wang-Po,Shieh Bing-Cheng,Chen Sy-Hann,Lin Chia-Feng

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Fabrication and properties of nanoporous GaN films

2. Porous Light-Emitting Diodes With Patterned Sapphire Substrates Realized by High-Voltage Self-Growth and Soft UV Nanoimprint Processes

3. Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces

4. Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes

5. Surface phonon polariton characteristic of honeycomb nanoporous GaN thin films

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of porous materials and structures for improving optical and thermal performance of inorganic and organic light-emitting diodes: A review;Sensors and Actuators A: Physical;2022-11

2. Porous nitride semiconductors reviewed;Journal of Physics D: Applied Physics;2020-07-06

3. Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching;APL Materials;2020-03-01

4. Morphology Effect of the ZnO Surface via Organic Etchants for Photon Extraction in III-Nitride Emitters;ECS Journal of Solid State Science and Technology;2016-12-15

5. InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer;Optics Express;2016-05-19

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