Preparation of Ni-Doped Colloidal Silica Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference33 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Growth and applications of Group III-nitrides
3. A novel process for the generation of pristine sapphire surfaces
4. An Overview of Recent Advances in Chemical Mechanical Polishing (CMP) of Sapphire Substrates
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2. Effect of Chitosan Oligosaccharide as a Complexing Agent on Chemical Mechanical Polishing Performance of C-, A-, and R-Plane Sapphire Substrate;ECS Journal of Solid State Science and Technology;2022-10-01
3. Chemical-mechanical polishing performance of core-shell structured polystyrene@ceria/nanodiamond ternary abrasives on sapphire wafer;Ceramics International;2021-11
4. Effect of ZnO-SiO2 Composite Abrasive on Sapphire Polishing Performance and Mechanism Analysis;ECS Journal of Solid State Science and Technology;2021-10-01
5. Effect of Potassium Persulfate as an Additive On Chemical Mechanical Polishing Performance on C-, A- and R-Plane Sapphire;ECS Journal of Solid State Science and Technology;2020-01-08
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