Properties of Cu Layers Deposited on TiZr-Based Barriers and CMP Compatibility of the Barriers-Reference-Cited by-同舟云学术

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Properties of Cu Layers Deposited on TiZr-Based Barriers and CMP Compatibility of the Barriers

Published:2004 Issue:8 Volume:7 Page:G175
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Balakumar S.,Hara Tohru,Kumar Rakesh,Wakabayashi Takamasa,Uchida Minoru

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference10 articles.

1. Diffusion barrier property of TaN between Si and Cu

2. Improved Barrier and Adhesion Properties in Sputtered TaSiN Layer for Copper Interconnects

3. Effect of thinning a WSiN/WSi[sub x] barrier layer on its barrier capability

4. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)

5. Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations

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