Comparison of the Performance of Lateral and Vertical InGaN/GaN-Based Light-Emitting Diodes with GaN and AlN Nucleation Layers-Reference-Cited by-同舟云学术

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Comparison of the Performance of Lateral and Vertical InGaN/GaN-Based Light-Emitting Diodes with GaN and AlN Nucleation Layers

Published:2015-11-04 Issue:2 Volume:5 Page:Q1-Q6
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kang Daesung,Jung Myunghoon,Choi Eunsil,Song Kiyoung,Jeong Hwanhee,Song June-O,Kim Da-Som,Kim Sun-Kyung,Seong Tae-Yeon

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-GaN multiquantum-well blue and green light-emitting diodes

3. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

4. Ca2PO4Cl : Eu2+: an intense near-ultraviolet converting blue phosphor for white light-emitting diodes

5. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure;Journal of Semiconductors;2017-08

2. Insights into the Silver Reflection Layer of a Vertical LED for Light Emission Optimization;ACS Applied Materials & Interfaces;2017-07-10

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