Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth-Reference-Cited by-同舟云学术

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Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth

Published:2015 Issue:12 Volume:4 Page:P415-P418
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Liu Zhi,Wen Juanjuan,Zheng Jun,Xue Chunlai,Zuo Yuhua,Li Chuanbo,Cheng Buwen,Wang Qiming

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

2. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

3. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

4. Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

5. High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research progress of Ge on insulator grown by rapid melting growth;Journal of Semiconductors;2018-05-29

2. Strain-Controlled of Compressive/Tensile Ge Epilayers on Si by Electron Cyclotron Resonance Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2016

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