Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3493184
Reference19 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
3. Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures
4. Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain
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