Spectral Sensitivity Analysis of OCD Based on Muller Matrix Formulism

Abstract

The spectral sensitivities of scatterometry based on Mueller matrix formulism at the technology node of 65 nm and beyond were studied. The advantage of Mueller matrix based polarized light scattering technique over conventional ellipsometry technique in measuring patterned wafers was present. RCWA method was used to simulate the 2D gratings scattering. As the analysis shown, Mueller measures produce more signals than SE or SR measurement does and Mueller spectral sensitivities to structure features variation are stronger in most cases.