Closed-Form Model for High-k MOSFET Channel Parameters: Reflecting Non-Saturating Inversion Surface Potential, Gate Stack Traps, and Work Function Anomaly

Author:

Kar Samares

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Design theory of a surface field-effect transistor

2. The silicon insulated-gate field-effect transistor

3. Grove A. S. , Physics and Technology of Semiconductor Devices, p. 321, Wiley, New York (1967).

4. Kar S. Houssa M. Van Elshocht S. Landheer D. Misra D. Kita K. , Eds., Physics and Technology of High-K Materials VIII, ECS Transactions, 33(3), ch. 11, ch. 12, ch. 2 (2010).

5. Kar S. Houssa M. Van Elshocht S. Misra D. Kita K. , Eds., Physics and Technology of High-K Materials IX, ECS Transactions, 41(3), ch. 8, ch. 7 (2011).

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1. On the Characteristics of Traps and Charges in the Si/SiO2/HfO2/TaN High-k Gate Stacks;ECS Journal of Solid State Science and Technology;2013-12-24

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