Simultaneous Rapid Thermal Growth of Gate and Interpoly Oxides for Analog MOS Applications
Author:
Affiliation:
1. Department of Electronics, Carleton University, Ottawa, Ontario, Canada K1S 5B6
2. Northern Telecom Electronics Limited, Ottawa, Ontario, Canada K1Y 4H7
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/1.2069174/pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Polysilicon Substrates;Encyclopedia of Materials: Science and Technology;2001
2. Rapid thermal oxidation of highly in situ phosphorus doped polysilicon thin films;Materials Science in Semiconductor Processing;1998-12
3. Simplified 0.35-μm flash EEPROM process using high-temperature oxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheral transistors gate oxide;IEEE Electron Device Letters;1997-07
4. High Temperature Oxide (HTO) for non volatile memories applications;Microelectronic Engineering;1997-06
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