Author:
Lohn Andrew J,Stevens James E,Mickel Patrick R,Hughart David R,Marinella Matthew J.
Abstract
Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x105 cycle endurance.
Publisher
The Electrochemical Society
Cited by
21 articles.
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