Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators-Reference-Cited by-同舟云学术

Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators

Published:1991-09-01 Issue:9 Volume:138 Page:2756-2762
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Walters M.¹²,Reisman A.¹²

Affiliation:

1. Center for Microelectronics, MCNC, Research Triangle Park, North Carolina 27709‐2889

2. Center for Microelectronics, MCNC, Research Triangle Park, North Carolina 27709‐2889 and Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086050/pdf

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