A Fabrication Method for Reduction of Silicide Contamination in Polycrystalline-Silicon Thin-Film Transistors-Reference-Cited by-同舟云学术

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A Fabrication Method for Reduction of Silicide Contamination in Polycrystalline-Silicon Thin-Film Transistors

Published:2007 Issue:5 Volume:10 Page:H142
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Song Nam-Kyu,Kim Young-Su,Kim Min-Sun,Han Shin-Hee,Joo Seung-Ki

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference13 articles.

1. Crystallization of LPCVD Silicon Films by Low Temperature Annealing

2. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

3. Pd induced lateral crystallization of amorphous Si thin films

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors;Solid-State Electronics;2017-06

2. Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization;Applied Physics A;2016-05-24

3. Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs;JSTS:Journal of Semiconductor Technology and Science;2016-04-30

4. Effect of Ultrathin Silicon Oxide Film for Enhanced Performance and Reliability of Metal-Induced Laterally Crystallized Thin-Film Transistors Using Silicon Nitride as a Gate Dielectric;ECS Journal of Solid State Science and Technology;2016

5. Retrograde-Mask Processed Polysilicon TFT for High Performance, Planar Structure, and Stable Operation;IEEE Electron Device Letters;2015-08

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