Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine Trifluoride Gas

Author:

Haruguchi Miyu,Kawasaki Ryohei,Habuka HitoshiORCID,Takahashi Yoshinao

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Sze S. M. , Semiconductor Devices, 2nd Ed., John Wiley & Sons (New York, USA, 2002).

2. Tummala R. R. , Fundamentals of Microsystems Packaging, p. 582, McGraw-Hill (New York, USA, 2001).

3. Sun J. Y. Wu S. J. Thach S. Kumar A. N. Wu. H. Wang R. W. Lin Y. Stow C. C. , Yttrium Oxide Based Surface Coating for Semiconductor IC Processing Vacuum Chambers, United States Pat., No. US6776873.

4. Plasma-Resistant Dense Yttrium Oxide Film Prepared by Aerosol Deposition Process

5. Liquid uranium corrosion studies of protective yttria coatings on tantalum substrate

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