SiGe Doped-Channel FET Formed by Sputter Epitaxy Method

Abstract

We report on a Si/Si0.7Ge0.3 p-type doped channel field effect transistor (p-DCFET) with a Si0.7Ge0.3 compressively strained channel fabricated by our previously proposed sputter epitaxy method. We have found that a postanneal is effective to increase the strain of the Si0.7Ge0.3 channel sandwiched by i-Si layers and that a 575 ˚C anneal for 10 min is most effective to obtain the largest strain. By comparison to the results of model simulation, the experimetally obtained I-V curves indicate that the hole mobility is enhanced by strain, the value of which is comparable to the theoretical prediction.