Voltage-Induced Material Removal for Electrochemical Mechanical Planarization of Copper in Electrolytes Containing NO[sub 3][sup −], Glycine, and H[sub 2]O[sub 2]-Reference-Cited by-同舟云学术

Voltage-Induced Material Removal for Electrochemical Mechanical Planarization of Copper in Electrolytes Containing NO[sub 3][sup −], Glycine, and H[sub 2]O[sub 2]

Published:2005 Issue:8 Volume:8 Page:G190
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Goonetilleke P. C.,Babu S. V.,Roy D.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference7 articles.

1. Chemical mechanical planarization for microelectronics applications

2. http://www.clarkson.edu/∼samoy/ECMP

3. L. Chen , Semiconductor Fabtech , 24th ed., p. 137, Fabtech.org, London (2004).

4. P.C. Goonetilleke and D. Roy , Mater. Chem. Phys., In press.

5. Relative Roles of H[sub 2]O[sub 2] and Glycine in CMP of Copper Studied with Impedance Spectroscopy

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new polishing method for complex structural parts: Moist particle electrolyte electrochemical mechanical polishing (MPE-ECMP);Electrochemistry Communications;2023-05

2. Synergistic Effect of Glycine and BTA on Step Height Reduction Efficiency after Copper CMP in Weakly Alkaline Slurry;ECS Journal of Solid State Science and Technology;2016-12-02

3. Electrochemical techniques and their applications for chemical mechanical planarization (CMP) of metal films;Advances in Chemical Mechanical Planarization (CMP);2016

4. Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives;Materials and Manufacturing Processes;2013-02

5. Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization;Japanese Journal of Applied Physics;2012-03-05