Author:
Polignano Maria Luisa,Codegoni Davide,Borionetti Gabriella,Bonoli Francesco,Brivio Jacopo,Greco Stefano,Marino Antonio,Monge Paolo,Patoprsta Ivana,Privitera Vittorio,Riva Caterina
Abstract
In this paper niobium is characterized as a silicon contaminant. It is shown that niobium is a relatively slow diffuser, with an intermediate diffusivity between very slow diffusers such as molybdenum and fast diffusers such as iron. Niobium is found to be very effective as a recombination center, and in addition prone to surface segregation. In addition, niobium shows optical activation, but no thermal activation. Three deep levels are revealed in niobium contaminated silicon, plus an additional level observed in high contamination dose samples only. One of these levels is located very close to midgap, and consistently niobium was also found very effective in degrading the generation lifetime.
Publisher
The Electrochemical Society
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Changes in electrical properties and conduction mechanisms of Pd/n-Si diodes due to niobium dopant;Materials Science and Engineering: B;2021-11
2. AFM, RBS and tribological properties of WC/WS2 nanostructures after 1.5 MeV Nb+ implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07
3. Modeling of Metal Properties in Si, Si1−xGex and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
4. Metallic Contaminants on Surfaces and Their Impact;Developments in Surface Contamination and Cleaning: Types of Contamination and Contamination Resources;2017
5. Molybdenum and Tungsten Contamination in MOS Capacitors;ECS Journal of Solid State Science and Technology;2016