Fenton-Like Reaction between Copper Ions and Hydrogen Peroxide for High Removal Rate of Tungsten in Chemical Mechanical Planarization

Author:

Kim Kijung,Lee Kangchun,So Sounghyun,Cho Sungwook,Lee Myeongjae,You Keungtae,Moon Jinok,Song TaeseupORCID

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Oliver M. R. , Chemical-mechanical planarization of semiconductor materials, Springer Science & Business Media (2013).

2. Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction

3. Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms

4. Steigerwald J. M. Murarka S. P. Gutmann R. J. , Chemical mechanical planarization of microelectronic materials, John Wiley & Sons (2008).

5. Electrochemistry of Chemical Vapor Deposited Tungsten Films with Relevance to Chemical Mechanical Polishing

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