Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier-Reference-Cited by-同舟云学术

Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier

Published:2009 Issue:11 Volume:156 Page:H832
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kwon Jung-Dae,Jeong Seong-Jun,Kang Jae-Wook,Kim Do-Geun,Kim Jong-Kuk,Rha Jong-Joo,Nam Kee-Seok,Kwon Se-hun

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. The thermal stability of Cu/FSG structure with amorphous and crystalline tantalum nitride diffusion barriers

2. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

3. Chemical vapor deposition of tantalum nitride films

4. Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization

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