Novel Post Cleaning Solutions for Next Generation Cu CMP Application

Abstract

An effective post CMP cleaning process has become a crucial technology to determine whether CMP technology can be successfully applied in semiconductor industry. As semiconductor fabrication technology advances and a variety of new applications emerge, there is an increase in demand on apply CMP and post-cleaning technology to new materials. It is challenging to develop a clean chemistry compatible with various applications. In this study, the cleaning solution design concept for advanced Cu CMP process is discussed and a novel alkali clean chemistry is proposed. The performance of the new clean chemistry was investigated and compared to industry benchmark products. Based on the data of inorganic particle removal, organic residue removal, Cu etching rate, roughness, Cu corrosion and defectivity on Cu/ULK wafers, the proposed clean chemistry showed promising performance in advanced applications.