Role of Penetrating Agent on Colloidal Silica Particle Removal during Post Cu CMP Cleaning
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference24 articles.
1. The impact of diamond conditioners on scratch formation during chemical mechanical planarization (CMP) of silicon dioxide
2. BTA Free Alkaline Slurries Developed for Copper and Barrier CMP
3. Novel post CMP cleaning using buffered HF solution and ozone water
4. First observation on the feasibility of scratch formation by pad–particle mixture in CMP process
5. Relative roles of acetic acid, dodecyl sulfate and benzotriazole in chemical mechanical and electrochemical mechanical planarization of copper
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