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Reduction of Oxygen Plasma Damage by Postdeposition Helium Plasma Treatment for Carbon-Doped Silicon Oxide Low Dielectric Constant Films

  • Published:2003 Issue:1 Volume:6 Page:F1
  • ISSN:1099-0062
  • Container-title:Electrochemical and Solid-State Letters
  • language:en
  • Short-container-title:Electrochem. Solid-State Lett.

Author:

Wang Y. H.,Gui D.,Kumar R.,Foo P. D.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides;RSC Advances;2016

2. Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-03

3. Surface Degradation Mechanism During the Fluorine-Based Plasma Etching of a Low-k Material for Nanoscale Semiconductors;Journal of Nanoscience and Nanotechnology;2014-12-01

4. 3D integration of silicon-on-insulator (SOI) integrated circuits (ICs) for improved performance;Silicon-On-Insulator (SOI) Technology;2014

5. Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-01
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