Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements-Reference-Cited by-同舟云学术

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Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements

Published:2016 Issue:4 Volume:5 Page:P3206-P3210
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Ozden Burcu,Khanal Min P.,Youn Suhyeon,Mirkhani Vahid,Yapabandara Kosala,Park Minseo,Zhao Ming,Liang Hu,Kandaswamy Prem Kumar,Saripalli Y. N.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

2. Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

3. Depletion-Layer Photoeffects in Semiconductors

4. Photocurrent spectroscopy under depletion mode of transparent polymer field-effect transistors

5. Prasankumar R. P. Taylor A. J. “ Optical Techniques for Solid-State Materials Characterization”, p. 188 CRC Press, Boca Raton (2012).

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1. Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface;International Journal of Modern Physics C;2022-06-09

2. Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures;Applied Surface Science;2021-02

3. Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures;Physical Review Applied;2020-04-13

4. Polarization-dependent XEOL: Comparison of peculiar near-band-edge emission of non-polar a-plane GaN and ZnO wafers;Applied Physics Letters;2019-03-04

5. Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs);Journal of Applied Physics;2018-12-07

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