Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane: Rapid Thermal Chemical Vapor Deposition of Very Smooth Silicon at High Deposition Rates
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7916
2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7916
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/1.1836495/pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-Growth-Rate Chemical Vapor Deposition of Silicon: an Experimental and Modeling Approach;Zeitschrift für Physikalische Chemie;2005-05-01
2. Effects of atomic hydrogen on the selective area growth of Si and Si[sub 1−x]Ge[sub x] thin films on Si and SiO[sub 2] surfaces: Inhibition, nucleation, and growth;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
3. Initial Stage of Amorphous Si and Si[sub 0.7]Ge[sub 0.3] Deposition on SiO[sub 2] by Low-Pressure Chemical Vapor Deposition;Journal of The Electrochemical Society;2002
4. Fundamentals for the formation and structure control of thin films;Handbook of Thin Films;2002
5. Effects of deposition temperature and pressure of the surface roughness and the grain size of polycrystalline Si1-xGex films;Journal of Materials Science;2000
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