Contributions of Oxygen, Silicon, and Hydrogen to the Interface States of an Si ‐ SiO2, Interface

Abstract

Oxygen, silicon, and hydrogen ions are implanted with doses of 10 10 − 10 15 / cm 2 through the oxide of a MOS structure. The development of induced levels in Si can be observed. Annealing experiments from room temperature to 800°C show the transition from the nonequilibrium incorporation to the initial (nonimplanted) state. Hydrogen implantation hinders the restoration of a Si ‐ SiO 2 interface under H2 annealing.