Author:
Jameson John R.,Blanchard Philippe,Dinh John,Gonzales Nathan,Gopalakrishnan Vasudevan,Guichet Berenice,Hollmer Shane,Hsu Sue,Intrater Gideon,Kamalanathan Deepak,Kim David,Koushan Foroozan,Kwan Ming,Lewis Derric,Pedersen Bård,Ramsbey Mark,Runnion Ed,Shields Jeffrey,Tsai Kevin,Tysdal Aaron,Wang Daniel,Gopinath Venkatesh
Abstract
Conductive bridging RAM (CBRAM) is a resistive memory technology (RRAM) offering performance, power/energy, reliability, and cost advantages over incumbent nonvolatile memory technologies. The present article introduces the class of CBRAM in high-volume manufacturing today—subquantum CBRAM—and highlights similarities and differences between it and its predecessors. The materials requirements of subquantum CBRAM cells are described, and new insight into the switching mechanism is provided. Finally, its electrical characteristics are benchmarked, and its suitability for applications such as embedded memory, the Internet of Things (IoT), and radiation-tolerant electronics is summarized.
Publisher
The Electrochemical Society
Cited by
15 articles.
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