Effect of Fluorine Ion/Neutral-Beam Irradiation on Ohmic Contact Formation to n-Type GaN-Reference-Cited by-同舟云学术

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Effect of Fluorine Ion/Neutral-Beam Irradiation on Ohmic Contact Formation to n-Type GaN

Published:2007 Issue:6 Volume:10 Page:H161
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lee H. C.,Bae J. W.,Park B. J.,Jang J. H.,Yeom G. Y.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference16 articles.

1. Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures

2. Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact

3. AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C

4. Microstructure of Ti/Al ohmic contacts for n-AlGaN

5. V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low angle forward reflected neutral beam source and its applications;Journal of Physics D: Applied Physics;2008-01-04

2. Low-resistance Ohmic contact on undoped AlGaN∕GaN heterostructure with surface treatment using CCl2F2 reactive ion etching;Applied Physics Letters;2007-09-03

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