Abnormal Oxidation of NiSi Formed on Arsenic-Doped Substrate-Reference-Cited by-同舟云学术

Abnormal Oxidation of NiSi Formed on Arsenic-Doped Substrate

Published:2004 Issue:4 Volume:7 Page:G83
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Yun Jang-Gn,Ji Hee-Hwan,Oh Soon-Young,Bae Mi-Suk,Lee Hun-Jin,Huang Bin-Feng,Kim Yong-Goo,Wang Jin-Suk,Sung Nak-Gyun,Hu Sang-Bum,Lee Jeong-Gun,Park Seong-Hyung,Lee Hee-Seung,Ho Won-Joon,Kim Dae-Byung,Lee Hi-Deok

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference11 articles.

1. Salicides: materials, scaling and manufacturability issues for future integrated circuits (invited)

2. Silicide Technology in Deep Submicron Regime

3. Characterization of shallow silicided junctions for sub-quarter micron ULSI technology. Extraction of silicidation induced Schottky contact area

4. A Comparative Study of Nickel Silicide Formation Using a Titanium Cap Layer and a Titanium Interlayer

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1. Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device;Japanese Journal of Applied Physics;2008-10-17

2. Control of oxidation on NiSix during etching and ashing processes;Thin Solid Films;2007-04

3. Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology;IEICE Transactions on Electronics;2005-04-01

4. Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer;IEEE Electron Device Letters;2005-02

5. Thermal stability of nickel silicide on silicon on insulator (SOI) material;Materials Science and Engineering: B;2004-12