Author:
Suguro K,Iinuma T.,Ohuchi K,Miyashita K.,Akutsu H.,Yoshimura H.,Akasaka Y.,Nakajima K,Miyano K,Toyoshima Y.
Abstract
ABSTRACTSilicide technology using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi2 films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful in deep sub-quarter micron devices.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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