Cu Retardation Performance of Extrinsic Gettering Layers in Thinned Wafers Evaluated by Transient Capacitance Measurement-Reference-Cited by-同舟云学术

Cu Retardation Performance of Extrinsic Gettering Layers in Thinned Wafers Evaluated by Transient Capacitance Measurement

Published:2011 Issue:8 Volume:158 Page:H795
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lee K-W.,Bea J-C.,Fukushima T.,Tanaka T.,Koyanagi M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. M. Koyanagi ,Proceedings of 8th Symposium on Future Electron Devices, IEEE, 50 (1989).

2. T. Kunio, K. Oyama, Y. Hayashi, and M. Morimoto ,IEEE International Electron Devices Meeting, IEEE, 837 (1989).

3. Future system-on-silicon LSI chips

4. K-W. Lee, T. Nakamura, T. Ono, Y. Yamada, T. Mizukusa, H. Hashimoto, K-T. Park, H. Kurino, and M. Koyanagi ,IEEE International Electron Devices Meeting, 165 (2000).

5. K. Banerjee, S. J. Souri, P. Kapur, A. Mehrotra, and K. C. Saraswat ,Proceedings of THE IEEE, 89, 602 (2001).

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