Citric Acid Etching of GaAs1 − x Sb x , Al0.5Ga0.5Sb , and InAs for Heterostructure Device Fabrication-Reference-Cited by-同舟云学术

Citric Acid Etching of GaAs1 − x Sb x , Al0.5Ga0.5Sb , and InAs for Heterostructure Device Fabrication

Published:1994-12-01 Issue:12 Volume:141 Page:3526-3531
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

DeSalvo Gregory C.¹,Kaspi Ron¹,Bozada Christopher A.¹

Affiliation:

1. Wright Laboratory, Solid State Electronics Directorate, Research Division, Wright‐Patterson Air Force Base, Ohio 45433‐7323

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2059365/pdf

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet etch methods to achieve submicron active area self-aligned vertical Sb-heterostructure backward diodes;Materials Science in Semiconductor Processing;2024-03

2. Electrical Characteristics of In_0.53Ga_0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes;IEEE Transactions on Electron Devices;2022-08

3. Selective Etching of 6.1 Å Materials for Transfer-Printed Devices;2022 IEEE 49th Photovoltaics Specialists Conference (PVSC);2022-06-05

4. A synchrotron radiation photoelectron spectroscopy study on atomic-scale wet etching of InAs (111)-A and (111)-B in acidic peroxide solutions: surface chemistry versus kinetics;Materials Today Chemistry;2022-03

5. Epsilon near-zero all-optical terahertz modulator;Applied Physics Letters;2020-09-14